advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 3.2m rohs compliant & halogen-free i d 3 240a description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i d @t c =25 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.4 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 201412223 1 ap9970gp-hf halogen-free product -55 to 175 120 parameter rating drain-source voltage 60 gate-source voltage + 20 drain current 3 , v gs @ 10v(silicon limited) 240 drain current 3 , v gs @ 10v(silicon limited) 170 pulsed drain current 1 960 drain current, v gs @ 10v(package limited) thermal data parameter storage temperature range total power dissipation 375 -55 to 175 operating junction temperature range g d s g d s to-220(p) a p9970 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220 package is widely preferred for all commercial- industrial through hole applications. the low thermal resistance and low package cost contribute to the worldwide popular package.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 3.2 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =60a - 105 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 100 160 nc q gs gate-source charge v ds =48v - 14 - nc q gd gate-drain ("miller") charge v gs =10v - 54 - nc t d(on) turn-on delay time 2 v ds =30v - 60 - ns t r rise time i d =40a - 200 - ns t d(off) turn-off delay time r g =25 - 180 - ns t f fall time v gs =10v - 240 - ns c iss input capacitance v gs =0v - 4020 6430 pf c oss output capacitance v ds =25v - 1280 - pf c rss reverse transfer capacitance f=1.0mhz - 420 - pf r g gate resistance f=1.0mhz - 2 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =40a, v gs =0v - 80 - ns q rr reverse recovery charge di/dt=100a/s - 165 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 120a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9970gp-hf
ap9970gp-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 80 160 240 320 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0 40 80 120 160 0246810 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 175 o c 10v 8.0v 7.0v 6.0v v gs =5.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 20 40 60 80 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 246810 v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =40a t a =25 o c
ap9970gp-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =40a q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 10000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
ap9970gp-hf marking information 5 part numbe r package code meet rohs requirement for low voltage mosfet only 9970gp ywwsss date code (ywwsss) y last digit of the year ww week sss sequence
|
